Yb:CALGO – Laser Crystal – Gain Medium – Customized products

Product ID: 6558

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$100

Yb:CALGO – Laser Crystal – Gain Medium – Customized products

Yb:CALGO crystal product, also known as ytterbium calcium aluminum gadolinium oxide crystal, with the chemical formula of Yb3+:CaGdAlO4. It is a laser gain crystal with good comprehensive performance.

The Yb-doped crystal is used by calgo for high-power and ultra-short (femtosecond) lasers. It shows that the Yb-doped CaGdAlO4 crystal has an excellent performance in producing high-power and ultra-short laser pulses.

This crystal has remarkable thermal, spectroscopic, and mechanical properties and can efficiently and safely generate short-duration continuous wave radiation and ultrafast pulses. More specifically, its excellent thermo optical characteristics and high conversion efficiency allow high-power operation. Its high nonlinear coefficient helps optimize the research of mode-locked lasers.

In addition, its ultra-wide and flat-top emission band is conducive to generating complex structured light with excellent adjustability.

Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.

Main Characteristics of Yb: CALGO:
The high absorption coefficient at 979 nm
High excited emission cross-section
Low laser threshold
Extremely low quantum defects
A wide emission spectrum of 994 – 1050 nm
The high slope efficiency of diode pumping

It has recently been found that Yb3+:CaGdAlO4 is very interesting for developing diode-pumped short-pulse mode-locked lasers.

Compared with Ti: sapphire crystal (since the early 1990s, the ultrashort laser system developed by using chirped pulse amplification technology can produce very short and powerful pulses), Yb: CALGO can directly pump semiconductor lasers (green laser pumped Ti: sapphire crystal) with very high efficiency and high power.

Features of Yb: CALGO:
High thermal conductivity
Big gain bandwidth
Broad and smooth launch of bandwidth
Low temperature gradient refractive index
High power InGaAs laser diode cover absorption band

Material Specifications

Doping Concentration 1-10%
Parallelism 10〞
Vertical 10ˊ
Surface Quality 20/10
Surface Flatness <λ/10@632.8nm
Clear Aperture >90%
Chamfering 0.1mm@45°
Thickness/Diameter Tolerance ±0.05 mm

 

Physical and Chemical Properties

Chemical Formula Yb:CaGdAlO4  (Yb:CALGO)
Crystal Structure Tetragonal Crystal SystemK2NiF4 Type Structure
Melting Point 1840°C
Thermal Conductivity/（W·m-1·K-1） 11.4(Without Doping)
6.3(2% Yb:CALGO)
5(5% Yb:CALGO)
Thermal Shock Resistance（W.m-1 / 2） >4.5
Thermal Expansion Rate/（10-6·K-1） 35

 

Optical and Spectral Properties

Transmit Bandwidth*（FWHM）（nm） 80
Emission Wavelength（nm） 1018-1052
Minimum Theoretical Duration（fs） 14
Central Emission Peak（nm） 1050
Absorption (Usually Pumped)（nm） 980
Emission Cross Section（10-20 cm2） 0.8
Fluorescence Lifetime（μs） 420
σemτ（μscm2） 336
Quantum Defect <0.8%

 

Main Properties of Laser Materials Involved in Femtosecond Laser Development

Material Transmit Bandwidth（FWHM）（nm） Minimum Theoretical Duration（fs） Central Emission Peak Absorption（Usually Pumped）（nm）
Yb:YAG 9 124 1031 942
Yb:Glass 35 31 1020 975
Yb:GdCOB 44 26 1044 976
Yb:BOYS 60 18 1025 975
Yb:KGW 25 44 1023 981
Yb:KYW 24 46 1025 981
Yb:SYS 73 16 1040 979
Yb:YVO4 30 36 1008 984
Yb:CaF2 30 36 1047 980
Yb:CALGO 80 14 1050 980


Aorption and Emission Spectra

TaorLab laser crystals

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