- Solid State Laser
- Semiconductor Laser
- DPSS laser
- Gas Laser
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- Fiber Coupled Laser(MM)
- Fiber Coupled Laser(SM)
- Ultrafast laser
- Femtosecond Laser
- Picosecond Laser
- Pulsed Laser
- Q-switched Laser
- Raman Laser
- Narrow Linewidth Fiber Laser
- Wavelength Tunable Laser
- Laser Diode
- Laser Module
- Pigtailed Laser
- DFB Laser
- DBR Laser
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Ti:Sapphire
Ti:Sapphire (Titanium doped Sapphire) – Laser Crystal – Gain Medium – Customized products
Product ID: 6546
$100
Ti:Sapphire (Titanium doped Sapphire) – Laser Crystal – Gain Medium – Customized products
Ti3+:sapphire crystals (Titanium-doped sapphire) as an optically pumped, solid-state laser crystal is widely used in wavelength-tunable lasers.
Ti:Sapphire laser’s tunable range is 650-1100nm, and peaking at 800nm. It is one of the broadest wavelength-tunable laser crystals. The upper-state lifetime of Ti: sapphire is short to 3.2ms.
Because of the high saturation power, it’s hard to pump it by the lamp. Argon ion lasers, frequency-doubled Nd: YAG laser, etc., are usually adapted. Using self-mode-locking technology, the Ti: Sapphire laser can output laser pulse with pulse width as short as 6.5fs directly, the narrowest laser pulse of all lasers that directly output from the resonant cavity. The laser beam’s wavelength can cover broadband from blue to deep ultraviolet through frequency-double technology. Produced 193 nm laser has been used in lithography machine.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
Features:
Wide wavelength tunability
Broad absorption pump band
Preeminent output efficiency
Short upper-state lifetime(3.2 mm)
Narrow locked mode width
High damage thresholdExcellent thermal conductivity
Applications:
Ti:sapphire amplifier
Ti:sapphire tunable laser
Femtosecond titanium sapphire laser
Sapphire oscillator pump parameters
Parameter:
Material and Specifications
| Materials | Ti3+:Al2O3 |
| Concentration | (0.05~0.35) wt% |
| Orientation | A-Axis within 5°，E-vector parallel to C-Axis |
| Parallelism | 30〞 |
| Perpendicularity | 5ˊ |
| Figure of Merit(FOM) | 100~300 |
| Wavefront Distortion | <λ /4@632 nm |
| Surface Flatness | <λ/8@632 nm |
| Clear Aperture | >90% |
| Surface Quality | 10-5(MIL-PRF-13830B) |
| Coatings | Standard coating is AR with R < 5.0% each |
| face @532 nm and R < 0.5% each face, | |
| from 650 nm to 850 nm. Custom coatings | |
| Chamfer | <0.2×45° |
Physical and Chemical Properties
| Crystal Structure | Hexagonal |
| Density | 3.98 g/cm3 |
| Melting Point | 2040 °C |
| Thermal Conductivity | 33 W / (m K) |
| Temperature dependence of refractive index | 13 × 10−6K−1 |
| Thermal shock resistance parameter | 790 W/m |
| Thermal Expansion | ≈ 5 × 10-6K-1 |
| Hardness (Mohs) | 9 |
| Young`s Modulus /GPa | 335 |
| Specific heat | 0.1 cal/g |
| Tensile Strength/Mpa | 400 |
| Diameter | 4-12mm |
| Ti density for 0.1% at. doping | 4.56 × 1019cm−3 |
Optical and Spectral Properties
| Laser Transition | F3/2→F1/2 |
| Laser Wavelength | 660-1200 nm |
| Center | 800 nm |
| Tunable Absorption Band | 400-600 nm |
| Absorption Peak | 488 nm |
| Emission Cross Section@ 790 nm | 41 × 10-20 cm2 |
| Fluorescence Lifetime | 3.2 ms |
| Emission Line Width | 650-1100 nm |
| Refractive Index@ 633 nm | 1.77@ 532 nm; 1.76@800 nm; 1.75@1100 nm |
| Absorption Coefficient | 0.5～6.0 cm-1 |
Absorption and Emission Spectra
