AgGaSe2 (Silver Gallium Selenide) – Laser Crystal – Nonlinear Crystal – Customized Products
AgGaSe2 (Silver Gallium Selenide Crystal), referred to as AGSe crystal, is a group I-III-Ⅵ2 ternary compound semiconductor with chalcopyrite structure and 4-2 m point group. It is an excellent mid- and far-infrared nonlinear optical material, which can transmit infrared light from 0.73 to 21 μm, with a large nonlinear coefficient (d36=43×10-12 m/V), suitable birefringence, phase matching for the second harmonic in the range of 3 to 18 μm, and is an effective crystal material for mid-infrared laser frequency doubling, and also has excellent properties of three-wave nonlinear interaction (OPO) It is an effective crystal material for mid-infrared laser multiplication and has excellent properties for three-wave nonlinear interaction (OPO). The available waveband is 0.9-16 μm. 2.5-12 μm OPO tuned light source is obtained by pumping AgGaSe2 crystal with Ho:YLF 2.05 μm; 1.9-5.5 μm tuned light source is output by non-critical phase matching OPO pumped with 1.4-1.55 μm tuned light source.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
FEATURES
Large transmission range: from 0.73 to 18 μm
Low optical absorption and low scattering
Application wavelengths up to 17 μm in the mid-IR
High FOM (quality factor) for nonlinear interactions in NIR and MIR
High frequency doubling efficiency for mid-infrared lasers
Tunable OPO for solid-state lasers with efficiencies up to 10% optical narrow-band filtering in the region around each homogeneity point
Physicochemical Properties
| Chemical Formula | AgGaSe2 |
| Crystal Structure | Tetragonal |
| Lattice Constant | a=5.9920Å,c=10.8803Å |
| Optical Symmetry | Uniaxial Negative (no>ne,λ<804 nm ne>no) |
| Density | 5.7g/cm3 |
| Mohs Hardness | 3-3.5 |
| Transparency range | 0.71-19μm |
| Sellmeier Equation @T=293 K(λ in μm) | no2=6.8507+0.4297/(λ2-0.1584)-0.00125λ2; |
| ne2=6.6792+0.4598/(λ2-0.2122)-0.00126λ2 | |
| Refractive Index @10.5μm | no=2.5917,ne= 2.5585 |
| Thermal Conductivity @T=293 K | 1 (||c) Wm-1K-1, 1,1 (⊥c) Wm-1K-1 |
| Damage Threshold | >10MW/cm2@10.6μm,150 ns |
| Melting Point | 851℃ |
| Band Gap | 1.83eV |
| Clock Multiplier Factor | 33pm/V |
| Birefringence | 0.0246@1.06μm |
| 0.0317@5.3μm | |
| 0.0332@10.6μm |
Processing Parameters
| Orientation Accuracy | <±0.1° |
| Surface Finish | 30/20 per MIL-O-13830A |
| Face Shape | λ/8@632.8nm for T>=1mm |
| Clear Surface Tolerance | +0/-0.1mm |
| Length Tolerance | ±0.1mm |
| Parallelism | 30″ |
| Perpendicularity | 10′ |
| Bevel | <0.2mm×45° |
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