- Solid State Laser
- Semiconductor Laser
- DPSS laser
- Gas Laser
- Fiber Laser
- Fiber Coupled Laser(MM)
- Fiber Coupled Laser(SM)
- Ultrafast laser
- Femtosecond Laser
- Picosecond Laser
- Pulsed Laser
- Q-switched Laser
- Raman Laser
- Narrow Linewidth Fiber Laser
- Wavelength Tunable Laser
- Laser Diode
- Laser Module
- Pigtailed Laser
- DFB Laser
- DBR Laser
- SLED Laser
- VCSEL Laser
AgGaS2
AgGaS2(Silver Gallium Sulfide) – Laser Crystal – Nonlinear Crystal – Customized Products
Product ID: 6683
$100
AgGaS2(Silver Gallium Sulfide, AGS) – Laser Crystal – Nonlinear Crystal – Customized Products
AgGaS2(Silver Gallium Sulfide, AGS) crystal is a typical I-III-VVI2 chalcopyrite structure compound semiconductor, light yellow at room temperature, crystal infrared transparency range is wide, non-linear coefficient is large, has a large birefringence (~ 0.054), energy gap of 2.75eV, high quality factor, high threshold of optical damage, can be used for second harmonic generation, and frequency, optical parametric oscillation, etc. In particular, AgGaS2 crystal as a parametric upconversion device can achieve 90° non-critical phase matching at room temperature, and can convert infrared light in the 10.2~11.6 μm band to 0.566 μm green light in the range of 0~100°C. These are of great importance for applications of remote sensing, ranging and spectroscopic measurements with tuned CO2 lasers as detection light sources. AgGaS2 crystal is a new type of advanced infrared nonlinear optical material with excellent performance, which has important research value and application prospects in the fields of infrared detection, infrared remote control, infrared monitoring, laser communication and national defense, science and technology.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
FEATURES
Low light absorption
High conversion efficiency
Wide transmittance range
Large nonlinear optical coefficients
Low scattering short wavelength transmission
Basic Features
| Chemical Formula | AgGaS2 |
| Through Range | 0.47 – 13µm |
| Crystal Structure | Tetragonal System |
| Lattice Constant | a=5.756Å，c=10.301 Å |
| Density | 4.48g/cm3 |
| Mohs Hardness | 3.0 – 3.5 |
| Nonlinear Coefficient @10.6 μm, pm/V | d36 = 12.5 pm/V |
| Melting Point | 993℃ |
| Absorption Coefficient | <0.05 cm-1 @ 1.064 µm |
| <0.02 cm-1 @ 10.6 µm | |
| Negative Single Crystal Axis | no>ne(ne>no when λ<0.497µm) |
| Thermal Conductivity | 1.0 W/M/℃ |
| SHG Phase Matching | 1.8-11.2 µm |
| Damage Resistance Threshold@10 ns, 1.064 um | 30 MW/cm2(surface) |
| Thermal Expansion Coefficient | ||C: -8.1 x 10-6 /℃ |
| ⊥C: +19.8 x 10-6 /℃ | |
| Thermo-optic Coefficient | dno/dt=15.4 x 10-5/℃ |
| dne/dt=15.5 x 10-5/℃ | |
| Sellmeier Equation (λ in μm) T=20℃ | no2=3.3970+2.3982λ2/( λ2– 0.09311) +2.1640 λ2 /(λ2-950); |
| ne2=3.5873+1.9533λ2/(λ2 – 0.11066) + 2.3391λ2/(λ2-1030.7) | |
| Bandgap | 2.7eV |
| Birefringence | 0.0231@0.53 µm |
| 0.0504@0.694 µm | |
| 0.0542@1.06 µm | |
| 0.0533@5.3 µm | |
| 0.0542@10.6 µm |
Processing Parameters
| Orientation Accuracy | <+-0.1° |
| Surface Finish | 20/10 per MIL-O-13830A |
| Face Shape | λ/8@632.8nm for T>=1mm |
| Clear Surface Tolerance | +0/-0.1mm |
| Length Tolerance | ±0.1mm |
| Parallelism | 30 ″ |
| Perpendicularity | 10′ |
| Bevel | <0.2mm×45° |
Spectrum
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